features z suitable for af-driver stages and low power output stages z complement to bc818 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -30 v v ceo collector-emitter voltage -25 v v ebo emitter-base voltage -5 v i c collector current ?continuous -0.8 a p c* collector power dissipation 300 mw t j junction temperature 150 t stg storage temperature -65-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100 a, i e =0 -30 v collector-emitter breakdown voltage v (br)ceo i c = -10 ma, i b =0 -25 v emitter-base breakdown voltage v (br)ebo i e = -100 a, i c =0 -5 v collector cut-off current i cbo v cb = -25 v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -4 v, i c =0 -0.1 a h fe(1) v ce = -1 v, i c = -100 ma 100 630 dc current gain h fe(2) v ce = -1 v, i c = -300 ma 60 collector-emitter saturation voltage v ce(sat) i c =- 500 ma, i b = -50 ma -0.7 v base-emitter voltage v be v ce = -1 v, i c = -300 ma -1.2 v transition frequency f t v ce = -5 v, i c = -10 ma, f= 50 mhz 100 mhz collector output capacitance c ob v cb = -10 v, i e =0, f= 1 mhz 12 pf classification of h fe rank 16 25 40 range h fe(1) 100-250 160-400 250-630 marking 5e 5f 5g so t -23 1. base 2. emitter 3. collector BC808 transistor (pnp) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics BC808 2 date:2011/05 www.htsemi.com semiconductor jinyu
3 date:2011/05 www.htsemi.com semiconductor jinyu BC808
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